File information: | |
File name: | am81720-0.pdf [preview am81720-0] |
Size: | 85 kB |
Extension: | |
Mfg: | ST |
Model: | am81720-0 🔎 am817200 |
Original: | am81720-0 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST am81720-0.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 24-06-2020 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name am81720-0.pdf AM81720-012 RF & MICROWAVE TRANSISTORS COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED RUGGIZED VSWR :1 . . LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 7.4 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE BRANDING AM81720-012 81720-12 PIN CONNECTION DESCRIPTION The AM81720-012 is designed specifically for Tele- communications applications. The device is capable of withstanding any mis- match load condition at any phase angle (VSWR :1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/gold metallization system. The unique AMPACTM devices are housed in Her- 1. Collector 3. Emitter metic Metal/Ceramic packages with internal 2. Base 4. Base Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 |
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