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BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 DESCRIPTION 2 1 The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are TO-220 mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDW94B and BDW94C respectively. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K R 2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t NPN BDW 93B BDW 93C PNP BDW 94B BDW 94C V CBO Collector-Base Voltage (IE = 0) 80 100 V V CEO Collector-Emitter Voltage (I B = 0) 80 100 V IC Collector Current 12 A I CM Collector Peak Current 15 A IB Base Current 0.2 A P t ot Total Dissipation at T c 25 C o 80 W o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C For PNP types voltage and current values are negative. June 1997 1/6 BDW93B/BDW93C/BDW94B/BDW94C THERMAL DATA