Philips bfs17a free download

File name bfs17a.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS It is intended for RF applications such as oscillators in TV tuners. 1 2 PINNING Top view MSB003 PIN DESCRIPTION 1 base Marking code: E2p. 2 emitter Fig.1 SOT23. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter 25 V VCEO collector-emitter voltage open base 15 V IC DC collector current 25 mA Ptot total power dissipation up to Ts = 70 C; note 1 300 mW fT transition frequency IC = 25 mA; VCE = 5 V; f = 500 MHz; 2.8 GHz Tamb = 25 C GUM maximum unilateral power gain IC = 14 mA; VCE = 10 V; f = 800 MHz 13.5 dB F noise figure IC = 2 mA; VCE = 5 V; f = 800 MHz; 2.5 dB Tamb = 25 C VO output voltage dim = 60 dB; IC = 14 mA; VCE = 10 V; 150 mV RL = 75 ; Tamb = 25 C; f(p+qr) = 793.25 MHz LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 25 V VCEO collector-emit