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STU7NB90 STU7NB90I N-CHANNEL 900V - 1.1 - 7.3 A Max220/Max220I PowerMeshTM MOSFET TYPE VDSS RDS(on) ID STU7NB90 900 V < 1.45 7.3 A STU7NB90I 900 V < 1.45 7.3 A s TYPICAL RDS(on) = 1.1 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 s VERY LOW INTRINSIC CAPACITANCES 2 1 s GATE CHARGE MINIMIZED s REDUCED VOLTAGE SPREAD Max220 Max220I DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company's proprieraty edge termi- nation structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STU7NB90 STU7NB90I VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 k) 900 V VGS Gate- source Voltage