ST am1011,075 free download

File name am1011,075.pdf

AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY . . LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE BRANDING AM1011-075 1011-75 DESCRIPTION PIN CONNECTION The AM1011-075 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and tempera- tures and is capable of withstanding 10:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. The AM1011-075 is supplied in the AMPACTM Her- 1. Collector 3. Emitter metic M etal/Ceramic package with i nternal Input/Output matching structures. 2. Base 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25