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STK22N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS( on) ID STK22N06 60 V < 0.065 22 A s TYPICAL RDS(on) = 0.048 s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC 3 s LOW GATE CHARGE 1 2 s HIGH CURRENT CAPABILITY 3 2 1 s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION SOT-82 SOT-194 (option) APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS INTERNAL SCHEMATIC DIAGRAM s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VD S Drain-source Voltage (V GS = 0) 60 V V DG R Drain- gate Voltage (R GS = 20 k) 60 V V GS Gate-source Voltage