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STK22N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE V DSS R DS( on) ID
STK22N06 60 V < 0.065 22 A

s TYPICAL RDS(on) = 0.048
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
3
s LOW GATE CHARGE 1
2
s HIGH CURRENT CAPABILITY 3
2
1
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION SOT-82 SOT-194
(option)
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS INTERNAL SCHEMATIC DIAGRAM
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VD S Drain-source Voltage (V GS = 0) 60 V
V DG R Drain- gate Voltage (R GS = 20 k) 60 V
V GS Gate-source Voltage