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STW8NC90Z N-CHANNEL 900V - 1.1 - 7.6A TO-247 Zener-Protected PowerMESHTMIII MOSFET TYPE VDSS RDS(on) ID STW8NC90Z 900 V < 1.38 7.6 A s TYPICAL RDS(on) = 1.1 s EXTREMELY HIGH dv/dt CAPABILITY GATE- TO-SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s) TO-247 t( DESCRIPTION uc The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrating d ro back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capabil- ity with higher ruggedness performance as request- P ed by a large variety of single-switch applications. APPLICATIONS le te so s SINGLE-ENDED SMPS IN MONITORS, Ob COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT - ABSOLUTE MAXIMUM RATINGS ct (s) du Symbol Parameter Value Unit ro VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 k) P 900 V VGS e Gate- source Voltage