ST pd85025c free download

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PD85025C RF power transistor - LdmoST family Preliminary Data Features Excellent thermal stability Common source configuration POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V BeO free package ESD protection In compliance with the 2002/95/EC european M243 Epoxy sealed directive Description The PD85025C is a common source Figure 1. Pin connection N-channel, enhancement-mode lateral Field- Effect RF power transistor. It is designed for high gain, broadband commercial and industrial 1 applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85025C boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology. 3 PD85025C's superior linearity performance makes it an ideal solution for mobile application. 2 1. Drain 3. Source 2. Gate Table 1. Device summary Order code Package Packing PD85025C M243 Box December 2007 Rev 1 1/10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 10 change without notice. Contents PD85025C Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .