ST but70 free download

File name but70.pdf

BUT70 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION s SWITCHING REGULATORS 3 2 s MOTOR CONTROL 1 s HIGH FREQUENCY AND EFFICENCY CONVERTERS TO-218 DESCRIPTION The BUT70 is a Multiepitaxial planar NPN transistor in TO-218 plastic package. It's intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-emitter Voltage (V BE = -1.5V) 200 V V CEO Collector-emitter Voltage (I B = 0) 125 V V EBO Emitter-Base Voltage (I C = 0) 7 V I E(RMS) Emitter Current 40 A I EM Emitter Peak Current 120 A IB Base Current 8 A I BM Base Peak Current 24 A P tot Total Power Dissipation at T case < 25 o C 200 W o T stg Storage Temperature -65 to 150 C o Tj Max Operating Junction Temperature 150 C July 1997 1/4 BUT70 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 0.63 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER Collector Cut-off V CE = V CEV 1 mA o