File information: | |
File name: | psmn003_30p-b.pdf [preview psmn003 30p-b] |
Size: | 291 kB |
Extension: | |
Mfg: | Philips |
Model: | psmn003 30p-b 🔎 |
Original: | psmn003 30p-b 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Philips psmn003_30p-b.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 29-06-2020 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name psmn003_30p-b.pdf PSMN003-30P; PSMN003-30B N-channel enhancement mode field-effect transistor Rev. 01 -- 23 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PSMN003-30P in SOT78 (TO-220AB) PSMN003-30B in SOT404 (D2-PAK) 2. Features s Low on-state resistance s Fast switching. 3. Applications s High frequency computer motherboard DC to DC converters s OR-ing applications. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d 2 drain (d) [1] 3 source (s) g mb drain (d) MBB076 s 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors PSMN003-30 series N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 175 |
Date | User | Rating | Comment |