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STD30NF06 N-CHANNEL 60V - 0.020 - 28A IPAK/DPAK STripFETTM II POWER MOSFET TYPE VDSS RDS(on) ID STD30NF06 60 V <0.028 28 A s TYPICAL RDS(on) = 0.020 s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 s THROUGH-HOLE IPAK (TO-251) POWER 3 2 1 PACKAGE IN TUBE (SUFFIX "-1") 1 s SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL IPAK DPAK TO-251 TO-252 (SUFFIX "T4") (Suffix "-1") (Suffix "T4") DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip- based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged INTERNAL SCHEMATIC DIAGRAM avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL , AUDIO AMPLIFIERS s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 k) 60 V VGS Gate- source Voltage