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STW26NM60 N-CHANNEL 600V - 0.125 - 30A TO-247 MDmeshTM MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STW26NM60 600 V < 0.135 30 A s TYPICAL RDS(on) = 0.125 s HIGH dv/dt AND AVALANCHE CAPABILITIES s IMPROVED ESD CAPABILITY s LOW INPUT CAPACITANCE AND GATE CHARGE s) s LOW GATE INPUT RESISTANCE t( 3 2 uc 1 DESCRIPTION TO-247 The MDmeshTM is a new revolutionary MOSFET d technology that associates the Multiple Drain pro- cess with the Company's PowerMESHTM horizon- P ro te tal layout. The resulting product has an Figure 2: Internal Schematic Diagram outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The le so adoption of the Company's proprietary strip tech- nique yields overall dynamic performance that is Ob significantly better than that of similar competi- tion's products. - APPLICATIONS t( s) uc The MDmeshTM family is very suitable for increas- ing power density of high voltage converters allow- d ing system miniaturization and higher efficiencies. Pro e let so Table 2: Order Codes Ob SALES TYPE MARKING PACKAGE PACKAGING STW26NM60 W26NM60 TO-247 TUBE Rev. 5 February 2005 1/9 STW26NM60 Table 3: Absolute Maximum ratings Symbol