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STP6NB80 STP6NB80FP N-CHANNEL 800V - 1.6 - 5.7A TO-220/TO-220FP PowerMeshTM MOSFET TYPE VDSS RDS(on) ID STP6NB80 800 V < 1.9 5.7 A STP6NB80FP 800 V < 1.9 5.7 A s TYPICAL RDS(on) = 1.6 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 3 s VERY LOW INTRINSIC CAPACITANCES 2 2 1 1 DESCRIPTION TO-220 TO-220FP Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- nation structure, gives the lowest R DS(on) per area, INTERNAL SCHEMATIC DIAGRAM exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC-DC & DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP6NB80 STP6NB80FP VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 k) 800 V VGS Gate- source Voltage