LGE 3dd13005 free download

File name 3dd13005.pdf

3DD13005(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 4 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700 V Collector-emitter breakdown V(BR)CEO IC= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 1 mA Collector cut-off current ICEO VCE= 400V, IB=0 0.1 mA Emitter cut-off current IEBO VEB=7V, IC=0 0.05 mA hFE1 VCE= 5V, IC= 1A 10 60 DC current gain hFE2 VCE= 5V, IC= 10mA 5 hFE3 VCE= 5V, IC= 2A 8 40 VCE (sat)1 IC=1A, IB=0.2A 0.3 V Collector-emitter saturation voltage