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3DD13005(NPN)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
Features
power switching applications
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous 4 A
PC Collector Power Dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700 V
Collector-emitter breakdown V(BR)CEO IC= 10mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V
Collector cut-off current ICBO VCB= 700V, IE=0 1 mA
Collector cut-off current ICEO VCE= 400V, IB=0 0.1 mA
Emitter cut-off current IEBO VEB=7V, IC=0 0.05 mA
hFE1 VCE= 5V, IC= 1A 10 60
DC current gain hFE2 VCE= 5V, IC= 10mA 5
hFE3 VCE= 5V, IC= 2A 8 40
VCE (sat)1 IC=1A, IB=0.2A 0.3 V
Collector-emitter saturation voltage
VCE (sat)2 IC=4A, IB=1A 0.8 V
Base-emitter saturation voltage VBE (sat) IC=2A, IB=0.5A 1.6 V
Transition Frequency fT VCE=10V, IC=500mA, f =1MHz 5 MHz
Fall time tf IB1=-IB2=0.4A, IC=2A, VCC=120V 0.6