Philips buk556-60a 1 free download

File name buk556-60a_1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK556-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 50 A Switched Mode Power Supplies Ptot Total power dissipation 150 W (SMPS), motor control, welding, RDS(ON) Drain-source on-state resistance 26 m DC/DC and AC/DC converters, and VGS = 5 V in automotive and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 60 V VDGR Drain-gate voltage RGS = 20 k - 60 V