KEC kf6n60p-f free download

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SEMICONDUCTOR KF6N60P/F N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF6N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL UNIT KF6N60P KF6N60F Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V KF6N60F @TC=25 6 6* ID Drain Current @TC=100 3.8 3.8* A Pulsed (Note1) IDP 15 15* Single Pulsed Avalanche Energy EAS 180 mJ (Note 2) Repetitive Avalanche Energy EAR 4 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 100 41.7 W PD Dissipation Derate above25 0.8 0.33 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.25 3.0 /W Thermal Resistance, Junction-to- RthJA 62.5 62.5 /W Ambient * : Drain current limited by maximum junction temperature. PIN CONNECTION 2011. 6. 30 Revision No : 0 1/2 KF6N60P/F ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Dr