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SEMICONDUCTOR KF6N60P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF6N60P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 600V, ID= 6A
RDS(ON)=1.4 (Max) @VGS =10V
Qg(typ.) =16nC
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC SYMBOL UNIT
KF6N60P KF6N60F
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
KF6N60F
@TC=25 6 6*
ID
Drain Current @TC=100 3.8 3.8* A
Pulsed (Note1) IDP 15 15*
Single Pulsed Avalanche Energy
EAS 180 mJ
(Note 2)
Repetitive Avalanche Energy
EAR 4 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 100 41.7 W
PD
Dissipation Derate above25 0.8 0.33 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 1.25 3.0 /W
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W
Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2011. 6. 30 Revision No : 0 1/2
KF6N60P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.6 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3.0A - 1.2 1.4
Dynamic
Total Gate Charge Qg - 16 -
VDS=480V, ID=6A
Gate-Source Charge Qgs - 3.1 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 6.0 -
Turn-on Delay time td(on) - 20 -
VDD=300V, ID=6A
Turn-on Rise time tr - 20 -
RG=25 (Note4,5) ns
Turn-off Delay time td(off) - 50 -
VGS=10V
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 710 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 80 - pF
Reverse Transfer Capacitance Crss - 8.0 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 6
VGS Pulsed Source Current ISP - - 24
Diode Forward Voltage VSD IS=6A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=6A, VGS=0V, - 390 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 2.2 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 9.5mH, IS=6A, VDD=50V, RG = 25 , Starting Tj = 25 .
Note 3) IS 6A, dI/dt 100A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
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