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STP20NM60 - STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 600V - 0.25 - 20A TO-220/FP/D2PAK/I2PAK MDmeshTMPower MOSFET TYPE VDSS RDS(on) ID STP20NM60 600 V < 0.29 20 A STP20NM60FP 600 V < 0.29 20 A STB20NM60 600 V < 0.29 20 A 3 3 STB20NM60-1 600 V < 0.29 20 A 1 2 1 2 s TYPICAL RDS(on) = 0.25 TO-220 TO-220FP s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE 3 3 1 12 DESCRIPTION I2PAK D2PAK The MDmeshTM is a new revolutionary MOSFET tech- nology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The INTERNAL SCHEMATIC DIAGRAM resulting product has an outstanding low on-resis- tance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's propri- etary strip technique yields overall dynamic perfor- mance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing sys- tem miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)20NM60(-1) STP20NM60FP VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V V