Philips bfg198 free download

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DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 DESCRIPTION PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended fpage 4 1 emitter for wideband amplifier applications. The device features a high gain and 2 base excellent output voltage capabilities. 3 emitter 4 collector 1 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 10 V IC DC collector current 100 mA Ptot total power dissipation up to Ts = 135 C (note 1) 1 W hFE DC current gain IC = 50 mA; VCE = 5 V; Tj = 25 C 40 90 fT transition frequency IC = 50 mA; VCE = 8 V; f = 1 GHz; 8 GHz Tamb = 25 C GUM maximum unilateral power IC = 50 mA; VCE = 8 V; f = 500 MHz; 18 dB gain Tamb = 25 C IC = 50 mA; VCE = 8 V; f = 800 MHz; 15 dB Tamb = 25 C Vo output voltage dim = 60 dB; IC = 70 mA; VCE = 8 V; 700 mV RL = 75 ; Tamb = 25 C; f(p+qr) = 793.25 MHz LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS