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Descr: . Electronic Components Datasheets Active components Transistors ST bul743.pdf
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BUL743 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 2 Applications 1 Electronic ballast for fluorescent lighting up to TO-220 256 W (8 x 32 W) Switch mode power supplies Description Figure 1. Internal schematic diagram The device is manufactured using the diffused collector in planar technology adopting new and enhanced high voltage structure. It has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Table 1. Device summary Order code Marking Package Packaging BUL743 BUL743 TO-220 Tube May 2009 Doc ID 15263 Rev 3 1/10 www.st.com 10 Electrical ratings BUL743 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 1200 V VCEO Collector-emitter voltage (IB = 0) 500 V VEBO Emitter-base voltage (IC = 0, IB = 6 A, tp < 10 ms) V(BR)EBO V IC Collector current 12 A ICM Collector peak current (tP < 5 ms) 24 A IB Base current 6 A IBM Base peak current (tP < 5 ms) 12 A Ptot Total dissipation at Tc = 25

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