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2STC4793 NPN power bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Complementary to 2STA1837 High transition frequency, typical fT = 100 MHz Applications Audio power amplifier 3 Drive stage amplifier 2 1 TO-220FP Description This device is a NPN transistor manufactured using new "PB-HDC" (power bipolar high density current) technology. The resulting transistor Figure 1. Internal schematic diagram shows good gain linearity behavior. Table 1. Device summary Order code Marking Package Packaging 2STC4793 2STC4793 TO-220FP Tube March 2010 Doc ID 15401 Rev 2 1/7 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 7 change without notice. Electrical ratings 2STC4793 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 230 V VCEO Collector-emitter voltage (IB = 0) 230 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 1 A ICM Collector peak current 2 A PTOT Total dissipation at TC = 25