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Descr: . Electronic Components Datasheets Active components Transistors ST stp9nk65z.pdf
Group:Electronics > Components > Transistors
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STP9NK65Z STP9NK65ZFP N-CHANNEL 650V - 1 - 7A TO-220/TO-220FP Zener-Protected SuperMESHTMPower MOSFET TARGET DATA TYPE VDSS RDS(on) ID Pw STP9NK65Z 650 V < 1.2 7A 110 W STP9NK65ZFP 650 V < 1.2 7A 30 W s TYPICAL RDS(on) = 1.0 s EXTREMELY HIGH dv/dt CAPABILITY s IMPROVED ESD CAPABILITY 3 2 3 s 100% AVALANCHE RATED 1 2 1 s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES TO-220 TO-220FP s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip- based PowerMESHTM layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmeshTM products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP9NK65Z P9NK65Z TO-220 TUBE STP9NK65ZFP P9NK65ZFP TO-220FP TUBE July 2003 1/7 STP9NK65 - STP9NK65ZFP ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP9NK65Z STP9NK65ZFP VDS Drain-source Voltage (VGS = 0) 650 V VDGR Drain-gate Voltage (RGS = 20 k) 650 V VGS Gate- source Voltage

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