ST stgb10nb37lz free download

File name stgb10nb37lz.pdf

STGB10NB37LZ N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMeshTM IGBT TYPE VCES VCE(sat) IC STGB10NB37LZ CLAMPED < 1.8 V 20 A s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE s LOW ON-VOLTAGE DROP s LOW GATE CHARGE 3 s HIGH CURRENT CAPABILITY 1 s HIGH VOLTAGE CLAMPING FEATURE D2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has INTERNAL SCHEMATIC DIAGRAM designed an advanced family of IGBTs, the PowerMESH TM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS s AUTOMOTIVE IGNITION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) CLAMPED V VECR Reverse Battery Protection 18 V VGE Gate-Emitter Voltage CLAMPED V IC Collector Current (continuos) at TC = 100