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STGB10NB37LZ
N-CHANNEL CLAMPED 20A - D2PAK
INTERNALLY CLAMPED PowerMeshTM IGBT

TYPE VCES VCE(sat) IC

STGB10NB37LZ CLAMPED < 1.8 V 20 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s LOW GATE CHARGE
3
s HIGH CURRENT CAPABILITY
1
s HIGH VOLTAGE CLAMPING FEATURE

D2PAK
DESCRIPTION

Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has INTERNAL SCHEMATIC DIAGRAM
designed an advanced family of IGBTs, the
PowerMESH TM IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.

APPLICATIONS
s AUTOMOTIVE IGNITION

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VGS = 0) CLAMPED V
VECR Reverse Battery Protection 18 V
VGE Gate-Emitter Voltage CLAMPED V
IC Collector Current (continuos) at TC = 100