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SGSF324 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s VERY HIGH SWITCHING SPEED APPLICATIONS: s SWITCH MODE POWER SUPPLIES DESCRIPTION 3 The SGSF324 is manufactured using 2 1 Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. TO-220 The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Un it V CES Collector-Emitter Voltage (VBE = 0) 1200 V V CEO Collector-Emitter Voltage (IB = 0) 600 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 4 A I CM Collector Peak Current (tp < 5 ms) 8 A IB Base Current 3 A I BM Base Peak Current (tp < 5 ms) 6 A o P tot T otal Dissipation at Tc = 25 C 70 W o T s tg Storage Temperature -65 to 150 C o Tj Max. Operating Junction T emperature 150 C September 1997 1/6 SGSF324 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-Case Max 1.78 C/W o R t hj- amb Thermal Resistance Junction-Ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CES Collector Cut-off V CE = 1200 V