Philips blf7g15ls-200 free download

File name blf7g15ls-200.pdf

BLF7G15LS-200 Power LDMOS transistor Rev. 2 -- 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1476 to 1511 1600 28 50 19.5 29 35[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1450 MHz to 1550 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1450 MHz to 1550 MHz frequency range NXP Semiconductors BLF7G15LS-200 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 drain 1 1 2 gate 3 3 source [1]