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STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS(on) ID STP20N10 100 V < 0.12 20 A s TYPICAL RDS(on) = 0.09 s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE 3 s HIGH CURRENT CAPABILITY 2 1 s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION TO-220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS INTERNAL SCHEMATIC DIAGRAM s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 100 V V DGR Drain- gate Voltage (R GS = 20 k) 100 V V GS Gate-source Voltage