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STP52N25M5 N-channel 250 V, 0.055 28 A, TO-220 , MDmesh TM V Power MOSFET Features RDS(on) Type VDSS ID max STP52N25M5 250 V < 0.065 28 A Amongst the best RDS(on)* area 3 High dv/dt capability 2 1 Excellent switching performance TO-220 Easy to drive 100% avalanche tested Application Switching applications Figure 1. Internal schematic diagram Description This devices is an N-channel MDmeshTM V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STP52N25M5 52N25M5 TO-220 Tube July 2010 Doc ID 17776 Rev 1 1/12 www.st.com 12 Contents STP52N25M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 17776 Rev 1 STP52N25M5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Val