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Electronic components, integrated circuits, semiconductor - datasheets and schematics| File information: | |
| File name: | si2304ds.pdf [preview si2304ds] |
| Size: | 270 kB |
| Extension: | |
| Mfg: | Philips |
| Model: | si2304ds 🔎 |
| Original: | si2304ds 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors Philips si2304ds.pdf |
| Group: | Electronics > Components > Transistors |
| Uploaded: | 08-07-2020 |
| User: | Anonymous |
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| Extracted files: | 1 | |
File name si2304ds.pdf SI2304DS N-channel enhancement mode field-effect transistor M3D088 Rev. 01 -- 17 August 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology Product availability: SI2304DS in SOT23. 2. Features s TrenchMOSTM technology s Very fast switching s Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) 3 2 source (s) d 3 drain (d) g 1 2 MBB076 s Top view MSB003 SOT23 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors SI2304DS N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 150 | ||
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