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Descr: . Electronic Components Datasheets Active components Transistors ST stp11nm60fd.pdf
Group:Electronics > Components > Transistors
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STP11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V - 0.40 - 11A TO-220 / TO-220FP/I2PAK FDmeshTMPower MOSFET (with FAST DIODE) TYPE VDSS RDS(on) ID STP11NM60FD 600 V < 0.45 11 A STP11NM60FDFP 600 V < 0.45 11 A STB11NM60FD-1 600 V < 0.45 11 A TYPICAL RDS(on) = 0.40 2 3 2 3 1 1 HIGH dv/dt AND AVALANCHE CAPABILITIES TO-220 TO-220FP 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE 3 LOW GATE INPUT RESISTANCE 12 TIGHT PROCESS CONTROL AND HIGH I2PAK MANUFACTURING YIELDS DESCRIPTION The FDmeshTM associates all advantages of re- duced on-resistance and fast switching with an in- INTERNAL SCHEMATIC DIAGRAM trinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in par- ticular ZVS phase-shift converters. APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP11NM60FD P11NM60FD TO-220 TUBE STP11NM60FDFP P11NM60FDFP TO-220FP TUBE STB11NM60FD-1 B11NM60FD-1 I2PAK TUBE September 2003 1/11 STP11NM60FD - STP11NM60FDFP - STB11NM60FD-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP11NM60FD STP11NM60FDFP STB11NM60FD-1 VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage

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