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Descr: . Electronic Components Datasheets Active components Transistors ST mj4032_mj4035.pdf
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MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s MONOLITHIC DARLINGTON CONFIGURATION s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS s GENERAL PURPOSE SWITCHING 1 s GENERAL PURPOSE AMPLIFIERS 2 DESCRIPTION The MJ4035 is silicon epitaxial-base NPN power TO-3 transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in general purpose and amplifier applications. The complementary PNP type is the MJ4032. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 6 K R2 Typ. = 55 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit PNP MJ4032 NPN MJ4035 V CBO Collector-Base Voltage (I E = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 16 A IB Base Current 0.5 A P tot Total Dissipation at T c 25 o C 150 W o T stg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C For PNP types voltage and current values are negative. June 1997 1/4 MJ4032 / MJ4035 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.17 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless

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