ST std4n20 free download

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STD4N20 N-CHANNEL 200V - 1.2 - 4A DPAK/IPAK MESH OVERLAYTM MOSFET TYPE VDSS RDS(on) ID STD4N20 200 V < 1.5 4A s TYPICAL RDS(on) = 1.2 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 3 2 s ADD SUFFIX "T4" FOR OREDERING IN TAPE & 1 1 REEL DPAK IPAK DESCRIPTION TO-252 TO-251 Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Company's proprietary edge termina- INTERNAL SCHEMATIC DIAGRAM tion structure, makes it suitable in coverters for lighting applications. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain-gate Voltage (RGS = 20 k) 200 V VGS Gate- source Voltage