Philips bfq67 free download

File name bfq67.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification 1998 Aug 27 Supersedes data of September 1995 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION High power gain Silicon NPN wideband transistor in a plastic SOT23 package. alfpage 3 Low noise figure High transition frequency Gold metallization ensures PINNING excellent reliability. PIN DESCRIPTION 1 2 1 base Top view MSB003 APPLICATIONS 2 emitter Satellite TV tuners and RF portable 3 collector communications equipment up to Marking code: V2p. 2 GHz. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 10 V IC collector current (DC) 50 mA Ptot total power dissipation Ts 97 C; note 1 300 mW hFE DC current gain IC = 15 mA; VCE = 5 V 60 100 fT transition frequency IC = 15 mA; VCE = 8 V 8 GHz GUM maximum unilateral IC = 15 mA; VCE = 8 V; f = 1 GHz 14 dB power gain F noise figure IC = 5 mA; VCE = 8 V; f = 1 GHz 1.3 dB Note 1. Ts is the temperature at the soldering point of the collector tab. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter