Philips pbhv9050z free download

File name pbhv9050z.pdf

PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 1 -- 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Medium power SMD plastic package 1.3 Applications Electronic ballasts LED driver for LED chain module LCD backlighting Automotive motor management Flyback converters Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCESM collector-emitter peak VBE = 0 - - -500 V voltage VCEO collector-emitter voltage open base - - -500 V IC collector current - - -0.25 A hFE DC current gain VCE = -10 V; [1] 80 160 300 IC = -50 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 4 2, 4 2 collector 3 emitter 1 4 collector 1 2 3 3