GSME bss84 free download

File name bss84.pdf

Guilin Strong Micro-Electronics Co.,Ltd. BSS84 SOT-23 (SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P MOS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS -50 V - Gate- Source Voltage VGS +20 V - Drain Current (continuous) IDR -130 mA - Drain Current (pulsed) IDRM -520 mA - THERMAL CHARACTERISTICS Symbol Max Unit Characteristic Total Device Dissipation PD 200 mW TA=25 25 Derate above25 25 1.8 mW/ Thermal Resistance Junction to Ambient RJA 350 /W Junction and Storage Temperature TJ,Tstg 150,-55to+150 Guilin Strong Micro-Electronics Co.,Ltd. BSS84 DEVICE MARKING BSS84=SP BSS84= ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted 25) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS -50 -- -- V -(ID =-250uA ,VGS=0V) Gate Threshold Voltage VGS(th) -1.0 -- -2.5 V (ID =-250uA ,VGS= VDS) Diode Forward Voltage Drop VSD -- -- -1.5 V (ISD=-200mA ,VGS=0V) Zero Gate Voltage Drain Current (VGS=0V, VDS= -50V) IDSS -- -- -15 uA (VGS=0V, VDS=-50V, TA=125) -60 Gate Body Leakage IGSS -- -- +10 nA (VGS=+20V, VDS=0V) Static Drain-Source On-State Resistance RDS(ON) -- -- 10 (ID=-100mA ,VGS=-5V) Input Capacitance CISS -- 73 -- pF (VGS=0V, VDS=-25V,f=1MHz) Common Source Output Capacitance COSS -- 10 -- pF (VGS=0V, VDS=-25V,f=1MHz) Turn-ON Time t(on) -- -- 5 ns (VDS=-30V, ID=-270mA, RGEN=6) Turn-OFF Time t(off) -- -- 20 ns (VDS=-30V, ID=-270mA, RGEN=6) Reverse Recovery Time trr -- 10 -- ns (ISD=-100mA, VGS=0V) 1. FR-5=1.0