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STL20NM20N N-CHANNEL 200V - 0.088 - 20A PowerFLATTM ULTRA LOW GATE CHARGE MDmeshTM II MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STL20NM20N 200 V < 0.105 20 A WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.088 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE s) LOW GATE RESISTANCE PowerFlat (6x5) LOW INPUT CAPACITANCE (Chip Scale Package) t( uc HIGH dv/dt and AVALANCHE CAPABILITIES DESCRIPTION d This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technol- P ro te ogy to lower voltages. The device exhibits world- Figure 2: Internal Schematic Diagram wide lowest gate charge for any given on- resistance.Its use is therefore ideal as primary le so switch in isolated DC-DC converters for Telecom and Computer applications.Used in combination Ob with secondary-side low-voltage STripFETTM prod- ucts, it contributes to reducing losses and boosting efficiency.The new PowerFLATTM package allows - s) a significant reduction in board space without com- t( promising performance. APPLICATIONS d uc ro The MDmeshTM family is very suitable for increas- P ing power density allowing system miniaturization and higher efficiencies e let so Table 2: Order Codes Ob SALES TYPE STL20NM20N MARKING L20NM20N PACKAGE PowerFLATTM(6x5) PACKAGING TAPE & REEL