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Descr: . Electronic Components Datasheets Active components Transistors ST stb14nf10.pdf
Group:Electronics > Components > Transistors
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STB14NF10 STP14NF10 STP14NF10FP N-CHANNEL 100V - 0.115 - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFETTM II POWER MOSFET TYPE VDSS RDS(on) ID STB14NF10 100 V <0.13 15 A STP14NF10 100 V <0.13 15 A STP14NF10FP 100 V <0.13 10 A s TYPICAL RDS(on) = 0.115 3 3 1 s EXCEPTIONAL dv/dt CAPABILITY 1 2 s 100% AVALANCHE TESTED D2PAK TO-220FP TO-263 s APPLICATION ORIENTED CHARACTERIZATION (Suffix "T4") s SURFACE-MOUNTING D2PAK (TO-263) 3 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 2 IN TAPE & REEL (SUFFIX "T4") TO-220 DESCRIPTION This MOSFET series realized with STMicroelectronics INTERNAL SCHEMATIC DIAGRAM unique STripFETTM process has specifically been de- signed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STB14NF10 STP14NF10FP STP14NF10 VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 k) 100 V VGS Gate- source Voltage

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