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File name: | phkd13n03lt.pdf [preview phkd13n03lt] |
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Mfg: | Philips |
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Descr: | . Electronic Components Datasheets Active components Transistors Philips phkd13n03lt.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 11-07-2020 |
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File name phkd13n03lt.pdf PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 03 -- 27 April 2010 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching Simple gate drive required due to low characteristics gate charge 1.3 Applications DC-to-DC convertors Notebook computers Lithium-ion battery applications Portable equipment 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj 25 |
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