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PHKD13N03LT
Dual N-channel TrenchMOS logic level FET
Rev. 03 -- 27 April 2010 Product data sheet

1. Product profile

1.1 General description
Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.

1.2 Features and benefits
Low conduction losses due to low Suitable for high frequency
on-state resistance applications due to fast switching
Simple gate drive required due to low characteristics
gate charge

1.3 Applications
DC-to-DC convertors Notebook computers
Lithium-ion battery applications Portable equipment

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25