ST am83135-05 free download

File name am83135-05.pdf

AM83135-005 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALL IZATION . . EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY . . LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.0 W MIN. WITH 5.2 dB GAIN .400 x .400 2NL FL (S042) hermetically sealed O RDER CODE BRANDING AM83135-005 83135-5 DESCRIPTION The AM83135-005 device is a medium power sili- PIN CONNECTION con bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths. duty cycles and tempera- tures, and can withstand a 5:1 output VSWR. Low RF thermal resistance, refractory/gold metal- lization, and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. The AM83135-005 is supplied in the AMPACTM Hermetic Metal/Ceramic package with internal In- put/Output matching circuitry, and is intended for 1. Collector 3. Emitter military and other high reliability applications. 2. Base 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25