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File name: | stb40ne03l.pdf [preview stb40ne03l] |
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Mfg: | ST |
Model: | stb40ne03l 🔎 |
Original: | stb40ne03l 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST stb40ne03l.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 11-07-2020 |
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File name stb40ne03l.pdf STB40NE03L-20 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET TYPE V DSS R DS(on) ID s TYPICAL RDS(on) = 0.014 s EXCEPTIONAL dv/dt CAPABILITY s LOW GATE CHARGE A 100 oC s APPLICATION ORIENTED CHARACTERIZATION 3 s FOR THROUGH-HOLE VERSION CONTACT 1 SALES OFFICE D2PAK DESCRIPTION TO-263 This Power MOSFET is the latest development of (suffix "T4") SGS-THOMSON unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- INTERNAL SCHEMATIC DIAGRAM able manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (VGS = 0) 30 V V DGR Drain- gate Voltage (RGS = 20 k) 30 V V GS Gate-source Voltage |
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