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Descr: . Electronic Components Datasheets Active components Transistors CET cea3252.pdf
Group:Electronics > Components > Transistors
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CEA3252 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 5A, RDS(ON) = 32m @VGS = 10V. RDS(ON) = 45m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-89 package. G D S D G SOT-89 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS

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