Text preview for : cea3252.pdf part of CET cea3252 . Electronic Components Datasheets Active components Transistors CET cea3252.pdf
Back to : cea3252.pdf | Home
CEA3252
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
30V, 5A, RDS(ON) = 32m @VGS = 10V.
RDS(ON) = 45m @VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D
Lead free product is acquired.
SOT-89 package.
G
D
S
D
G
SOT-89
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS