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Descr: . Electronic Components Datasheets Active components Transistors CET cet04n10.pdf
Group:Electronics > Components > Transistors
Uploaded:12-07-2020
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CET04N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 3A, RDS(ON) = 200m @VGS = 10V. RDS(ON) = 280m @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS

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