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CET04N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 3A, RDS(ON) = 200m @VGS = 10V.
RDS(ON) = 280m @VGS = 6V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. D
Lead free product is acquired.
SOT-223 package.
G
D S
D
G
SOT-223
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS