Philips bf908wr free download

File name bf908wr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary specification 1995 Apr 25 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING High forward transfer admittance PIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1 s, b source admittance to input capacitance ratio 2 d drain Low noise gain controlled amplifier up to 1 GHz. 3 g2 gate 2 4 g1 gate 1 APPLICATIONS VHF and UHF applications with 12 V supply voltage, such as television tuners and professional d communications equipment. 3 4 g2 DESCRIPTION g1 Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by 2 1 integrated back-to-back diodes between gates and source. s,b Top view MAM198 CAUTION Marking code: MD. The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline (SOT343R) and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage 12 V ID drain current 40 mA Ptot total power dissipation