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STS4NF100 N-channel 100V - 0.065 - 4A SO-8 STripFETTM II Power MOSFET General features Type VDSS RDS(on) ID STS4NF100 100V <0.070 4A Exceptional dv/dt capability 100 % avalanche tested Application oriented characterization S0-8 Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore Internal schematic diagram suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Applications Switching application Order codes Part number Marking Package Packaging STS4NF100 S4NF100 SO-8 Tape & reel January 2007 Rev 3 1/12 www.st.com 12 Contents STS4NF100 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STS4NF100 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (vgs = 0) 100 V VGS Gate- source voltage