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STS4NF100
N-channel 100V - 0.065 - 4A SO-8
STripFETTM II Power MOSFET
General features
Type VDSS RDS(on) ID
STS4NF100 100V <0.070 4A
Exceptional dv/dt capability
100 % avalanche tested
Application oriented characterization
S0-8
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore Internal schematic diagram
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
Switching application
Order codes
Part number Marking Package Packaging
STS4NF100 S4NF100 SO-8 Tape & reel
January 2007 Rev 3 1/12
www.st.com 12
Contents STS4NF100
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STS4NF100 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (vgs = 0) 100 V
VGS Gate- source voltage